P-Channel MOSFET, 11 A, 20 V, 8-Pin PowerDI3333-8 Diodes Inc DMP2008UFG-7

RS noliktavas nr.: 822-2611Ražotājs: DiodesZetexRažotāja kods: DMP2008UFG-7
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Tehniskie dokumenti

Specifikācija

Channel Type

P

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

20 V

Package Type

PowerDI3333-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

17 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

41 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.35mm

Typical Gate Charge @ Vgs

72 nC @ 4.5 V

Width

3.35mm

Minimum Operating Temperature

-55 °C

Height

0.85mm

Produkta apraksts

P-Channel MOSFET, 12V to 25V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,628

Katrs (Paka ir 25) (bez PVN)

€ 0,76

Katrs (Paka ir 25) (Ieskaitot PVN)

P-Channel MOSFET, 11 A, 20 V, 8-Pin PowerDI3333-8 Diodes Inc DMP2008UFG-7
Izvēlēties iepakojuma veidu

€ 0,628

Katrs (Paka ir 25) (bez PVN)

€ 0,76

Katrs (Paka ir 25) (Ieskaitot PVN)

P-Channel MOSFET, 11 A, 20 V, 8-Pin PowerDI3333-8 Diodes Inc DMP2008UFG-7
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
25 - 375€ 0,628€ 15,70
400 - 975€ 0,359€ 8,98
1000+€ 0,277€ 6,92

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

P

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

20 V

Package Type

PowerDI3333-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

17 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

41 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.35mm

Typical Gate Charge @ Vgs

72 nC @ 4.5 V

Width

3.35mm

Minimum Operating Temperature

-55 °C

Height

0.85mm

Produkta apraksts

P-Channel MOSFET, 12V to 25V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more