Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
20 V
Package Type
PowerDI3333-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
17 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
41 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
3.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.35mm
Typical Gate Charge @ Vgs
72 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
0.85mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts
P-Channel MOSFET, 12V to 25V, Diodes Inc
MOSFET Transistors, Diodes Inc.
€ 9,02
€ 0,361 Katrs (tiek piegadats Rulli) (bez PVN)
€ 10,92
€ 0,437 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
25
€ 9,02
€ 0,361 Katrs (tiek piegadats Rulli) (bez PVN)
€ 10,92
€ 0,437 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Industriālais iepakojums (Rullis)
25
Noliktavas stāvoklis patreiz nav pieejams
Daudzums | Vienības cena | Per Rullis |
---|---|---|
25 - 375 | € 0,361 | € 9,02 |
400 - 975 | € 0,206 | € 5,15 |
1000+ | € 0,16 | € 4,00 |
Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
20 V
Package Type
PowerDI3333-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
17 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
41 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
3.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.35mm
Typical Gate Charge @ Vgs
72 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
0.85mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts