Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
9.1 A
Maximum Drain Source Voltage
12 V
Package Type
U-DFN2020
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
95 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
2.03 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.05mm
Typical Gate Charge @ Vgs
28.4 nC @ 5 V
Width
2.05mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.58mm
Izcelsmes valsts
China
Produkta apraksts
P-Channel MOSFET, 12V to 25V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,114
Katrs (tiek piegadats Rulli) (bez PVN)
€ 0,138
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
25
€ 0,114
Katrs (tiek piegadats Rulli) (bez PVN)
€ 0,138
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
25
Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
9.1 A
Maximum Drain Source Voltage
12 V
Package Type
U-DFN2020
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
95 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
2.03 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.05mm
Typical Gate Charge @ Vgs
28.4 nC @ 5 V
Width
2.05mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.58mm
Izcelsmes valsts
China
Produkta apraksts