P-Channel MOSFET, 9.1 A, 12 V, 6-Pin U-DFN2020 Diodes Inc DMP1022UFDE-7

RS noliktavas nr.: 770-5143Ražotājs: DiodesZetexRažotāja kods: DMP1022UFDE-7
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Tehniskie dokumenti

Specifikācija

Channel Type

P

Maximum Continuous Drain Current

9.1 A

Maximum Drain Source Voltage

12 V

Package Type

U-DFN2020

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

95 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

2.03 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

2.05mm

Typical Gate Charge @ Vgs

28.4 nC @ 5 V

Width

2.05mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

0.58mm

Izcelsmes valsts

China

Produkta apraksts

P-Channel MOSFET, 12V to 25V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,114

Katrs (Paka ir 25) (bez PVN)

€ 0,138

Katrs (Paka ir 25) (Ieskaitot PVN)

P-Channel MOSFET, 9.1 A, 12 V, 6-Pin U-DFN2020 Diodes Inc DMP1022UFDE-7
Izvēlēties iepakojuma veidu

€ 0,114

Katrs (Paka ir 25) (bez PVN)

€ 0,138

Katrs (Paka ir 25) (Ieskaitot PVN)

P-Channel MOSFET, 9.1 A, 12 V, 6-Pin U-DFN2020 Diodes Inc DMP1022UFDE-7
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

P

Maximum Continuous Drain Current

9.1 A

Maximum Drain Source Voltage

12 V

Package Type

U-DFN2020

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

95 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

2.03 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

2.05mm

Typical Gate Charge @ Vgs

28.4 nC @ 5 V

Width

2.05mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

0.58mm

Izcelsmes valsts

China

Produkta apraksts

P-Channel MOSFET, 12V to 25V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more