N-Channel MOSFET, 7.5 A, 40 V, 8-Pin SO Diodes Inc DMNH4026SSD-13

RS noliktavas nr.: 146-4898Ražotājs: DiodesZetexRažotāja kods: DMNH4026SSD-13
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

7.5 A

Maximum Drain Source Voltage

40 V

Package Type

SO

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

32 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2 W

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+175 °C

Length

4.95mm

Typical Gate Charge @ Vgs

19.1 @ 10 V nC

Width

3.95mm

Number of Elements per Chip

1

Series

DMN

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Automotive Standard

AEC-Q101

Height

1.5mm

Produkta apraksts

Dual N-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,16

Katrs (Paka ir 10) (bez PVN)

€ 0,194

Katrs (Paka ir 10) (Ieskaitot PVN)

N-Channel MOSFET, 7.5 A, 40 V, 8-Pin SO Diodes Inc DMNH4026SSD-13
Izvēlēties iepakojuma veidu

€ 0,16

Katrs (Paka ir 10) (bez PVN)

€ 0,194

Katrs (Paka ir 10) (Ieskaitot PVN)

N-Channel MOSFET, 7.5 A, 40 V, 8-Pin SO Diodes Inc DMNH4026SSD-13
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

7.5 A

Maximum Drain Source Voltage

40 V

Package Type

SO

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

32 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2 W

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+175 °C

Length

4.95mm

Typical Gate Charge @ Vgs

19.1 @ 10 V nC

Width

3.95mm

Number of Elements per Chip

1

Series

DMN

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Automotive Standard

AEC-Q101

Height

1.5mm

Produkta apraksts

Dual N-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more