N-Channel MOSFET, 150 A, 40 V, 3-Pin TO-220AB Diodes Inc DMNH4005SCT

RS noliktavas nr.: 146-4658Ražotājs: DiodesZetexRažotāja kods: DMNH4005SCT
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

150 A

Maximum Drain Source Voltage

40 V

Package Type

TO-220AB

Series

DMN

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

165 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Maximum Operating Temperature

+175 °C

Width

9.01mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

48 nC @ 10 V

Length

10.66mm

Forward Diode Voltage

1.2V

Height

4.82mm

Minimum Operating Temperature

-55 °C

Automotive Standard

AEC-Q101

Produkta apraksts

N-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 2,10

Katrs (Tubina ir 50) (bez PVN)

€ 2,541

Katrs (Tubina ir 50) (Ieskaitot PVN)

N-Channel MOSFET, 150 A, 40 V, 3-Pin TO-220AB Diodes Inc DMNH4005SCT

€ 2,10

Katrs (Tubina ir 50) (bez PVN)

€ 2,541

Katrs (Tubina ir 50) (Ieskaitot PVN)

N-Channel MOSFET, 150 A, 40 V, 3-Pin TO-220AB Diodes Inc DMNH4005SCT
Noliktavas stāvoklis patreiz nav pieejams

Pirkt iepakojumos

DaudzumsVienības cenaPer Penālis
50 - 50€ 2,10€ 105,00
100+€ 1,95€ 97,50

Ideate. Create. Collaborate

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

150 A

Maximum Drain Source Voltage

40 V

Package Type

TO-220AB

Series

DMN

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

165 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Maximum Operating Temperature

+175 °C

Width

9.01mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

48 nC @ 10 V

Length

10.66mm

Forward Diode Voltage

1.2V

Height

4.82mm

Minimum Operating Temperature

-55 °C

Automotive Standard

AEC-Q101

Produkta apraksts

N-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more