N-Channel MOSFET, 6 A, 900 V, 3-Pin TO-220AB Diodes Inc DMN90H2D2HCTI

RS noliktavas nr.: 133-3383Ražotājs: DiodesZetexRažotāja kods: DMN90H2D2HCTI
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

900 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2.2 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

40 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Width

16.27mm

Number of Elements per Chip

1

Length

10.46mm

Typical Gate Charge @ Vgs

20.3 nC @ 10 V

Height

4.9mm

Series

DMN90H2D2HCTI

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Produkta apraksts

N-Channel MOSFET, 100V to 950V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 1,85

Katrs (Paka ir 5) (bez PVN)

€ 2,238

Katrs (Paka ir 5) (Ieskaitot PVN)

N-Channel MOSFET, 6 A, 900 V, 3-Pin TO-220AB Diodes Inc DMN90H2D2HCTI
Izvēlēties iepakojuma veidu

€ 1,85

Katrs (Paka ir 5) (bez PVN)

€ 2,238

Katrs (Paka ir 5) (Ieskaitot PVN)

N-Channel MOSFET, 6 A, 900 V, 3-Pin TO-220AB Diodes Inc DMN90H2D2HCTI
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

900 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2.2 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

40 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Width

16.27mm

Number of Elements per Chip

1

Length

10.46mm

Typical Gate Charge @ Vgs

20.3 nC @ 10 V

Height

4.9mm

Series

DMN90H2D2HCTI

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Produkta apraksts

N-Channel MOSFET, 100V to 950V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more