Dual N-Channel MOSFET, 200 mA, 60 V, 6-Pin SOT-363 Diodes Inc DMN65D8LDW-7

RS noliktavas nr.: 822-2602Ražotājs: DiodesZetexRažotāja kods: DMN65D8LDW-7
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

200 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

8 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

20V

Maximum Power Dissipation

400 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Length

2.2mm

Typical Gate Charge @ Vgs

0.87 nC @ 10 V

Width

1.35mm

Transistor Material

Si

Number of Elements per Chip

2

Height

1mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

Dual N-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

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Noliktavas stāvoklis patreiz nav pieejams

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Noliktavas stāvoklis patreiz nav pieejams

€ 0,048

Katrs (Paka ir 100) (bez PVN)

€ 0,058

Katrs (Paka ir 100) (Ieskaitot PVN)

Dual N-Channel MOSFET, 200 mA, 60 V, 6-Pin SOT-363 Diodes Inc DMN65D8LDW-7
Izvēlēties iepakojuma veidu

€ 0,048

Katrs (Paka ir 100) (bez PVN)

€ 0,058

Katrs (Paka ir 100) (Ieskaitot PVN)

Dual N-Channel MOSFET, 200 mA, 60 V, 6-Pin SOT-363 Diodes Inc DMN65D8LDW-7
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

200 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

8 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

20V

Maximum Power Dissipation

400 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Length

2.2mm

Typical Gate Charge @ Vgs

0.87 nC @ 10 V

Width

1.35mm

Transistor Material

Si

Number of Elements per Chip

2

Height

1mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

Dual N-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more