Diodes Inc N-Channel MOSFET, 28 A, 40 V, 3-Pin DPAK DMN4026SK3-13

RS noliktavas nr.: 165-8403Ražotājs: DiodesZetexRažotāja kods: DMN4026SK3-13
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

28 A

Maximum Drain Source Voltage

40 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

32 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3.4 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

6.7mm

Length

6.2mm

Typical Gate Charge @ Vgs

21.3 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Height

2.39mm

Izcelsmes valsts

China

Produkta apraksts

N-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Noliktavas stāvoklis patreiz nav pieejams

€ 527,50

€ 0,211 Katrs (Rulli ir 2500) (bez PVN)

€ 638,28

€ 0,255 Katrs (Rulli ir 2500) (Ieskaitot PVN)

Diodes Inc N-Channel MOSFET, 28 A, 40 V, 3-Pin DPAK DMN4026SK3-13

€ 527,50

€ 0,211 Katrs (Rulli ir 2500) (bez PVN)

€ 638,28

€ 0,255 Katrs (Rulli ir 2500) (Ieskaitot PVN)

Diodes Inc N-Channel MOSFET, 28 A, 40 V, 3-Pin DPAK DMN4026SK3-13
Noliktavas stāvoklis patreiz nav pieejams

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

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JOIN FOR FREE

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

28 A

Maximum Drain Source Voltage

40 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

32 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3.4 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

6.7mm

Length

6.2mm

Typical Gate Charge @ Vgs

21.3 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Height

2.39mm

Izcelsmes valsts

China

Produkta apraksts

N-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more