Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
7 A
Maximum Drain Source Voltage
30 V
Package Type
U-DFN2020
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
50 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Width
2.05mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.05mm
Typical Gate Charge @ Vgs
13.3 nC @ 15 V
Height
0.58mm
Minimum Operating Temperature
-55 °C
Series
DMN3042LFDF
Forward Diode Voltage
1.2V
Produkta apraksts
N-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,124
Katrs (Paka ir 50) (bez PVN)
€ 0,15
Katrs (Paka ir 50) (Ieskaitot PVN)
50
€ 0,124
Katrs (Paka ir 50) (bez PVN)
€ 0,15
Katrs (Paka ir 50) (Ieskaitot PVN)
50
Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
7 A
Maximum Drain Source Voltage
30 V
Package Type
U-DFN2020
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
50 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Width
2.05mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.05mm
Typical Gate Charge @ Vgs
13.3 nC @ 15 V
Height
0.58mm
Minimum Operating Temperature
-55 °C
Series
DMN3042LFDF
Forward Diode Voltage
1.2V
Produkta apraksts