N-Channel MOSFET, 9.9 A, 30 V, 6-Pin U-DFN2020 Diodes Inc DMN3025LFDF-7

RS noliktavas nr.: 133-3354Ražotājs: DiodesZetexRažotāja kods: DMN3025LFDF-7
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

9.9 A

Maximum Drain Source Voltage

30 V

Package Type

U-DFN2020

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

30 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

2.05mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

2.05mm

Typical Gate Charge @ Vgs

13.2 nC @ 15 V

Height

0.58mm

Series

DMN3025LFDF

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Produkta apraksts

N-Channel MOSFET, 30V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,034

Katrs (Paka ir 50) (bez PVN)

€ 0,041

Katrs (Paka ir 50) (Ieskaitot PVN)

N-Channel MOSFET, 9.9 A, 30 V, 6-Pin U-DFN2020 Diodes Inc DMN3025LFDF-7
Izvēlēties iepakojuma veidu

€ 0,034

Katrs (Paka ir 50) (bez PVN)

€ 0,041

Katrs (Paka ir 50) (Ieskaitot PVN)

N-Channel MOSFET, 9.9 A, 30 V, 6-Pin U-DFN2020 Diodes Inc DMN3025LFDF-7
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

9.9 A

Maximum Drain Source Voltage

30 V

Package Type

U-DFN2020

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

30 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

2.05mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

2.05mm

Typical Gate Charge @ Vgs

13.2 nC @ 15 V

Height

0.58mm

Series

DMN3025LFDF

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Produkta apraksts

N-Channel MOSFET, 30V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more