Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
21 A
Maximum Drain Source Voltage
30 V
Package Type
PDI3333
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
17 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Dual Base
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.15mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
3.15mm
Typical Gate Charge @ Vgs
21 nC @ 15 V
Height
0.8mm
Series
DMN3016LDV
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Produkta apraksts
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,086
Katrs (Paka ir 20) (bez PVN)
€ 0,104
Katrs (Paka ir 20) (Ieskaitot PVN)
20
€ 0,086
Katrs (Paka ir 20) (bez PVN)
€ 0,104
Katrs (Paka ir 20) (Ieskaitot PVN)
20
Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
21 A
Maximum Drain Source Voltage
30 V
Package Type
PDI3333
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
17 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Dual Base
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.15mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
3.15mm
Typical Gate Charge @ Vgs
21 nC @ 15 V
Height
0.8mm
Series
DMN3016LDV
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Produkta apraksts