N-Channel MOSFET, 900 mA, 20 V, 3-Pin X1-DFN1212 Diodes Inc DMN2450UFD-7

RS noliktavas nr.: 182-6892Ražotājs: DiodesZetexRažotāja kods: DMN2450UFD-7
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

900 mA

Maximum Drain Source Voltage

20 V

Package Type

X1-DFN1212

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.45V

Maximum Power Dissipation

890 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±12 V

Width

1.25mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

1.25mm

Typical Gate Charge @ Vgs

0.7 nC @ 4.5 V

Height

0.48mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Izcelsmes valsts

China

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,037

Katrs (Rulli ir 3000) (bez PVN)

€ 0,045

Katrs (Rulli ir 3000) (Ieskaitot PVN)

N-Channel MOSFET, 900 mA, 20 V, 3-Pin X1-DFN1212 Diodes Inc DMN2450UFD-7

€ 0,037

Katrs (Rulli ir 3000) (bez PVN)

€ 0,045

Katrs (Rulli ir 3000) (Ieskaitot PVN)

N-Channel MOSFET, 900 mA, 20 V, 3-Pin X1-DFN1212 Diodes Inc DMN2450UFD-7
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

900 mA

Maximum Drain Source Voltage

20 V

Package Type

X1-DFN1212

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.45V

Maximum Power Dissipation

890 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±12 V

Width

1.25mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

1.25mm

Typical Gate Charge @ Vgs

0.7 nC @ 4.5 V

Height

0.48mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Izcelsmes valsts

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more