Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
900 mA
Maximum Drain Source Voltage
20 V
Package Type
X1-DFN1212
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.45V
Maximum Power Dissipation
890 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Width
1.25mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
1.25mm
Typical Gate Charge @ Vgs
0.7 nC @ 4.5 V
Height
0.48mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Izcelsmes valsts
China
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,037
Katrs (Rulli ir 3000) (bez PVN)
€ 0,045
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
€ 0,037
Katrs (Rulli ir 3000) (bez PVN)
€ 0,045
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
900 mA
Maximum Drain Source Voltage
20 V
Package Type
X1-DFN1212
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.45V
Maximum Power Dissipation
890 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Width
1.25mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
1.25mm
Typical Gate Charge @ Vgs
0.7 nC @ 4.5 V
Height
0.48mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Izcelsmes valsts
China