Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
1 A
Maximum Drain Source Voltage
20 V
Package Type
X2-DFN1006
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
700 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.9V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
900 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Width
0.65mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
1.05mm
Typical Gate Charge @ Vgs
1.3 nC @ 10 V
Height
0.35mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Izcelsmes valsts
China
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,037
Katrs (Rulli ir 3000) (bez PVN)
€ 0,045
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
€ 0,037
Katrs (Rulli ir 3000) (bez PVN)
€ 0,045
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
Pirkt iepakojumos
Daudzums | Vienības cena | Per Rullis |
---|---|---|
3000 - 6000 | € 0,037 | € 111,00 |
9000 - 12000 | € 0,036 | € 108,00 |
15000+ | € 0,036 | € 108,00 |
Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
1 A
Maximum Drain Source Voltage
20 V
Package Type
X2-DFN1006
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
700 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.9V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
900 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Width
0.65mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
1.05mm
Typical Gate Charge @ Vgs
1.3 nC @ 10 V
Height
0.35mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Izcelsmes valsts
China