N-Channel MOSFET, 1 A, 20 V, 3-Pin X2-DFN1006 Diodes Inc DMN2450UFB4-7R

RS noliktavas nr.: 182-6891Ražotājs: DiodesZetexRažotāja kods: DMN2450UFB4-7R
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

1 A

Maximum Drain Source Voltage

20 V

Package Type

X2-DFN1006

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

700 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.9V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

900 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±12 V

Width

0.65mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

1.05mm

Typical Gate Charge @ Vgs

1.3 nC @ 10 V

Height

0.35mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Izcelsmes valsts

China

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,037

Katrs (Rulli ir 3000) (bez PVN)

€ 0,045

Katrs (Rulli ir 3000) (Ieskaitot PVN)

N-Channel MOSFET, 1 A, 20 V, 3-Pin X2-DFN1006 Diodes Inc DMN2450UFB4-7R

€ 0,037

Katrs (Rulli ir 3000) (bez PVN)

€ 0,045

Katrs (Rulli ir 3000) (Ieskaitot PVN)

N-Channel MOSFET, 1 A, 20 V, 3-Pin X2-DFN1006 Diodes Inc DMN2450UFB4-7R
Noliktavas stāvoklis patreiz nav pieejams

Pirkt iepakojumos

DaudzumsVienības cenaPer Rullis
3000 - 6000€ 0,037€ 111,00
9000 - 12000€ 0,036€ 108,00
15000+€ 0,036€ 108,00

Ideate. Create. Collaborate

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

1 A

Maximum Drain Source Voltage

20 V

Package Type

X2-DFN1006

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

700 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.9V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

900 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±12 V

Width

0.65mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

1.05mm

Typical Gate Charge @ Vgs

1.3 nC @ 10 V

Height

0.35mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Izcelsmes valsts

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more