Technical Document
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
4.2 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
45 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
800 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Typical Gate Charge @ Vgs
7 nC @ 4.5 V
Width
1.4mm
Transistor Material
Si
Length
3mm
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
1.1mm
Country of Origin
China
Product details
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
€ 2.25
€ 0.045 Each (In a Pack of 50) (Exc. Vat)
€ 2.72
€ 0.054 Each (In a Pack of 50) (inc. VAT)
Standard
50
€ 2.25
€ 0.045 Each (In a Pack of 50) (Exc. Vat)
€ 2.72
€ 0.054 Each (In a Pack of 50) (inc. VAT)
Stock information temporarily unavailable.
Standard
50
Stock information temporarily unavailable.
Technical Document
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
4.2 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
45 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
800 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Typical Gate Charge @ Vgs
7 nC @ 4.5 V
Width
1.4mm
Transistor Material
Si
Length
3mm
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
1.1mm
Country of Origin
China
Product details


