N-Channel MOSFET, 4.6 A, 20 V, 3-Pin SOT-23 Diodes Inc DMN2058U-7

RS noliktavas nr.: 133-3377Ražotājs: DiodesZetexRažotāja kods: DMN2058U-7
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

4.6 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

91 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

1.13 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Maximum Operating Temperature

+150 °C

Length

3mm

Typical Gate Charge @ Vgs

7.7 nC @ 10 V

Width

1.4mm

Number of Elements per Chip

1

Series

DMN2058U

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1mm

Produkta apraksts

N-Channel MOSFET, 12V to 28V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,087

Katrs (Paka ir 50) (bez PVN)

€ 0,105

Katrs (Paka ir 50) (Ieskaitot PVN)

N-Channel MOSFET, 4.6 A, 20 V, 3-Pin SOT-23 Diodes Inc DMN2058U-7
Izvēlēties iepakojuma veidu

€ 0,087

Katrs (Paka ir 50) (bez PVN)

€ 0,105

Katrs (Paka ir 50) (Ieskaitot PVN)

N-Channel MOSFET, 4.6 A, 20 V, 3-Pin SOT-23 Diodes Inc DMN2058U-7
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

4.6 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

91 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

1.13 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Maximum Operating Temperature

+150 °C

Length

3mm

Typical Gate Charge @ Vgs

7.7 nC @ 10 V

Width

1.4mm

Number of Elements per Chip

1

Series

DMN2058U

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1mm

Produkta apraksts

N-Channel MOSFET, 12V to 28V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more