Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
20 V
Series
DMN2056U
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
85 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
940 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
1.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3mm
Typical Gate Charge @ Vgs
4.3 nC @ 10 V
Height
1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Produkta apraksts
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,345
Katrs (Paka ir 50) (bez PVN)
€ 0,417
Katrs (Paka ir 50) (Ieskaitot PVN)
50
€ 0,345
Katrs (Paka ir 50) (bez PVN)
€ 0,417
Katrs (Paka ir 50) (Ieskaitot PVN)
50
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
50 - 450 | € 0,345 | € 17,25 |
500 - 950 | € 0,155 | € 7,75 |
1000 - 1950 | € 0,12 | € 6,00 |
2000 - 2950 | € 0,115 | € 5,75 |
3000+ | € 0,103 | € 5,15 |
Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
20 V
Series
DMN2056U
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
85 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
940 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
1.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3mm
Typical Gate Charge @ Vgs
4.3 nC @ 10 V
Height
1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Produkta apraksts