N-Channel MOSFET, 630 mA, 20 V, 3-Pin SOT-23 Diodes Inc DMN2004K-7

RS noliktavas nr.: 708-2425PRažotājs: DiodesZetexRažotāja kods: DMN2004K-7
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

630 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

900 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

350 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Typical Gate Charge @ Vgs

0.9 nC @ 4.5 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3mm

Width

1.4mm

Transistor Material

Si

Minimum Operating Temperature

-65 °C

Height

1.1mm

Produkta apraksts

N-Channel MOSFET, 12V to 28V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Noliktavas stāvoklis patreiz nav pieejams

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Noliktavas stāvoklis patreiz nav pieejams

€ 0,318

Katrs (tiek piegadats Rulli) (bez PVN)

€ 0,385

Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

N-Channel MOSFET, 630 mA, 20 V, 3-Pin SOT-23 Diodes Inc DMN2004K-7
Izvēlēties iepakojuma veidu

€ 0,318

Katrs (tiek piegadats Rulli) (bez PVN)

€ 0,385

Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

N-Channel MOSFET, 630 mA, 20 V, 3-Pin SOT-23 Diodes Inc DMN2004K-7
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cenaPer Rullis
25 - 125€ 0,318€ 7,95
150+€ 0,132€ 3,30

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

630 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

900 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

350 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Typical Gate Charge @ Vgs

0.9 nC @ 4.5 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3mm

Width

1.4mm

Transistor Material

Si

Minimum Operating Temperature

-65 °C

Height

1.1mm

Produkta apraksts

N-Channel MOSFET, 12V to 28V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more