Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
7 A
Maximum Drain Source Voltage
700 V
Package Type
TO-251
Mounting Type
Through Hole
Pin Count
3+Tab
Maximum Drain Source Resistance
900 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
68 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
2.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.8mm
Typical Gate Charge @ Vgs
18.4 nC @ 10 V
Height
7.17mm
Series
DMJ70H900HJ3
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Produkta apraksts
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 1,45
Katrs (Paka ir 5) (bez PVN)
€ 1,754
Katrs (Paka ir 5) (Ieskaitot PVN)
5
€ 1,45
Katrs (Paka ir 5) (bez PVN)
€ 1,754
Katrs (Paka ir 5) (Ieskaitot PVN)
5
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
5 - 20 | € 1,45 | € 7,25 |
25 - 95 | € 1,15 | € 5,75 |
100 - 495 | € 0,96 | € 4,80 |
500 - 995 | € 0,824 | € 4,12 |
1000+ | € 0,72 | € 3,60 |
Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
7 A
Maximum Drain Source Voltage
700 V
Package Type
TO-251
Mounting Type
Through Hole
Pin Count
3+Tab
Maximum Drain Source Resistance
900 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
68 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
2.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.8mm
Typical Gate Charge @ Vgs
18.4 nC @ 10 V
Height
7.17mm
Series
DMJ70H900HJ3
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Produkta apraksts