Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
9.3 A, 9.6 A
Maximum Drain Source Voltage
35 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
8.9 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.2mm
Transistor Material
Si
Number of Elements per Chip
2
Length
6.7mm
Typical Gate Charge @ Vgs
18.7 nC @ 10 V, 19.2 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
2.39mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Produkta apraksts
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
€ 6,52
€ 0,326 Katrs (tiek piegadats Rulli) (bez PVN)
€ 7,89
€ 0,394 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
20
€ 6,52
€ 0,326 Katrs (tiek piegadats Rulli) (bez PVN)
€ 7,89
€ 0,394 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
20
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Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
9.3 A, 9.6 A
Maximum Drain Source Voltage
35 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
8.9 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.2mm
Transistor Material
Si
Number of Elements per Chip
2
Length
6.7mm
Typical Gate Charge @ Vgs
18.7 nC @ 10 V, 19.2 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
2.39mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Produkta apraksts