Technical Document
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
33 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Maximum Power Dissipation
1.42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Transistor Material
Si
Number of Elements per Chip
1
Length
4.95mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
10.5 nC @ 10 V
Width
3.95mm
Height
1.5mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
€ 6.70
€ 0.268 Each (In a Pack of 25) (Exc. Vat)
€ 8.11
€ 0.324 Each (In a Pack of 25) (inc. VAT)
Standard
25
€ 6.70
€ 0.268 Each (In a Pack of 25) (Exc. Vat)
€ 8.11
€ 0.324 Each (In a Pack of 25) (inc. VAT)
Stock information temporarily unavailable.
Standard
25
Stock information temporarily unavailable.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 25 - 100 | € 0.268 | € 6.70 |
| 125+ | € 0.145 | € 3.62 |
Technical Document
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
33 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Maximum Power Dissipation
1.42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Transistor Material
Si
Number of Elements per Chip
1
Length
4.95mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
10.5 nC @ 10 V
Width
3.95mm
Height
1.5mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details


