Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
640 mA, 870 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-563
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
1.3 Ω, 700 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
530 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-6 V, +6 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
1.7mm
Width
1.25mm
Transistor Material
Si
Typical Gate Charge @ Vgs
0.62 nC @ 4.5 V, 0.74 nC @ 4.5 V
Minimum Operating Temperature
-55 °C
Height
0.6mm
Izcelsmes valsts
China
Produkta apraksts
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,027
Katrs (tiek piegadats Lente) (bez PVN)
€ 0,033
Katrs (tiek piegadats Lente) (Ieskaitot PVN)
50
€ 0,027
Katrs (tiek piegadats Lente) (bez PVN)
€ 0,033
Katrs (tiek piegadats Lente) (Ieskaitot PVN)
50
Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
640 mA, 870 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-563
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
1.3 Ω, 700 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
530 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-6 V, +6 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
1.7mm
Width
1.25mm
Transistor Material
Si
Typical Gate Charge @ Vgs
0.62 nC @ 4.5 V, 0.74 nC @ 4.5 V
Minimum Operating Temperature
-55 °C
Height
0.6mm
Izcelsmes valsts
China
Produkta apraksts