Dual P-Channel MOSFET, 130 mA, 50 V, 6-Pin SOT-363 Diodes Inc BSS84DW-7-F

RS noliktavas nr.: 708-2484Ražotājs: DiodesZetexRažotāja kods: BSS84DW-7-F
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Tehniskie dokumenti

Specifikācija

Channel Type

P

Maximum Continuous Drain Current

130 mA

Maximum Drain Source Voltage

50 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

10 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Length

2.2mm

Width

1.35mm

Number of Elements per Chip

2

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1mm

Produkta apraksts

Dual P-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,126

Katrs (Paka ir 25) (bez PVN)

€ 0,152

Katrs (Paka ir 25) (Ieskaitot PVN)

Dual P-Channel MOSFET, 130 mA, 50 V, 6-Pin SOT-363 Diodes Inc BSS84DW-7-F
Izvēlēties iepakojuma veidu

€ 0,126

Katrs (Paka ir 25) (bez PVN)

€ 0,152

Katrs (Paka ir 25) (Ieskaitot PVN)

Dual P-Channel MOSFET, 130 mA, 50 V, 6-Pin SOT-363 Diodes Inc BSS84DW-7-F
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

P

Maximum Continuous Drain Current

130 mA

Maximum Drain Source Voltage

50 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

10 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Length

2.2mm

Width

1.35mm

Number of Elements per Chip

2

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1mm

Produkta apraksts

Dual P-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more