Tehniskie dokumenti
Specifikācija
Memory Size
8Mbit
Organisation
1M x 8 bit, 512K x 16 bit
Number of Words
512K
Number of Bits per Word
8 bit, 16bit
Maximum Random Access Time
45ns
Address Bus Width
8 bit, 16 bit
Clock Frequency
1MHz
Low Power
Yes
Mounting Type
Surface Mount
Package Type
VFBGA
Pin Count
48
Dimensions
6 x 8 x 0.79mm
Maximum Operating Supply Voltage
3.6 V
Height
0.79mm
Maximum Operating Temperature
+85 °C
Length
6mm
Width
8mm
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
2.2 V
Produkta apraksts
Asynchronous Micropower (MoBL) SRAM Memory, Cypress Semiconductor
The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifications.
SRAM (Static Random Access Memory)
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 10,80
Katrs (bez PVN)
€ 13,07
Katrs (Ieskaitot PVN)
1
€ 10,80
Katrs (bez PVN)
€ 13,07
Katrs (Ieskaitot PVN)
1
Pirkt iepakojumos
Daudzums | Vienības cena |
---|---|
1 - 9 | € 10,80 |
10 - 24 | € 8,70 |
25 - 99 | € 8,50 |
100 - 499 | € 8,20 |
500+ | € 8,00 |
Tehniskie dokumenti
Specifikācija
Memory Size
8Mbit
Organisation
1M x 8 bit, 512K x 16 bit
Number of Words
512K
Number of Bits per Word
8 bit, 16bit
Maximum Random Access Time
45ns
Address Bus Width
8 bit, 16 bit
Clock Frequency
1MHz
Low Power
Yes
Mounting Type
Surface Mount
Package Type
VFBGA
Pin Count
48
Dimensions
6 x 8 x 0.79mm
Maximum Operating Supply Voltage
3.6 V
Height
0.79mm
Maximum Operating Temperature
+85 °C
Length
6mm
Width
8mm
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
2.2 V
Produkta apraksts
Asynchronous Micropower (MoBL) SRAM Memory, Cypress Semiconductor
The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifications.