Bourns BIDW50N65T Single Diode IGBT, 50 A 650 V TO-247

RS noliktavas nr.: 253-3508Ražotājs: BournsRažotāja kods: BIDW50N65T
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Tehniskie dokumenti

Specifikācija

Brand

Bourns

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

416 W

Package Type

TO-247

Configuration

Single Diode

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 3,40

Katrs (Tubina ir 600) (bez PVN)

€ 4,114

Katrs (Tubina ir 600) (Ieskaitot PVN)

Bourns BIDW50N65T Single Diode IGBT, 50 A 650 V TO-247

€ 3,40

Katrs (Tubina ir 600) (bez PVN)

€ 4,114

Katrs (Tubina ir 600) (Ieskaitot PVN)

Bourns BIDW50N65T Single Diode IGBT, 50 A 650 V TO-247
Noliktavas stāvoklis patreiz nav pieejams

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Tehniskie dokumenti

Specifikācija

Brand

Bourns

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

416 W

Package Type

TO-247

Configuration

Single Diode