HMC561LP3E Analog Devices, RF Amplifier Module Low Noise 2-Channel 10.5 GHz, 16-Pin QFN
Tehniskie dokumenti
Specifikācija
Brand
Analog DevicesAmplifier Type
Low Noise
Typical Output Power
14dBm
Number of Channels per Chip
2
Maximum Operating Frequency
10.5 GHz
Mounting Type
Surface Mount
Package Type
QFN
Pin Count
16
Dimensions
3.1 x 3.1 x 1mm
Height
1mm
Length
3.1mm
Width
3.1mm
Series
Hittite
Minimum Operating Temperature
-40 °C
Maximum Operating Supply Voltage
5.5 V
Minimum Operating Supply Voltage
4.5 V
Maximum Operating Temperature
+85 °C
Izcelsmes valsts
Malaysia
Produkta apraksts
RF Amplifiers, Analog Devices Hittite
Analog Devices Hittite have a series of RF amplifiers that have a range of functions. Some feature low Noise amplifiers, some RF Amplifiers are integrated with resonators, negative resistance devices, varactor diodes, and buffer amplifiers and other offer high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC driver amplifiers.
Radio Frequency (RF) Amplifiers, Analog Devices
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 55,50
Katrs (Rulli ir 50) (bez PVN)
€ 67,155
Katrs (Rulli ir 50) (Ieskaitot PVN)
50
€ 55,50
Katrs (Rulli ir 50) (bez PVN)
€ 67,155
Katrs (Rulli ir 50) (Ieskaitot PVN)
50
Pirkt iepakojumos
| Daudzums | Vienības cena | Per Rullis |
|---|---|---|
| 50 - 50 | € 55,50 | € 2 775,00 |
| 100+ | € 51,00 | € 2 550,00 |
Tehniskie dokumenti
Specifikācija
Brand
Analog DevicesAmplifier Type
Low Noise
Typical Output Power
14dBm
Number of Channels per Chip
2
Maximum Operating Frequency
10.5 GHz
Mounting Type
Surface Mount
Package Type
QFN
Pin Count
16
Dimensions
3.1 x 3.1 x 1mm
Height
1mm
Length
3.1mm
Width
3.1mm
Series
Hittite
Minimum Operating Temperature
-40 °C
Maximum Operating Supply Voltage
5.5 V
Minimum Operating Supply Voltage
4.5 V
Maximum Operating Temperature
+85 °C
Izcelsmes valsts
Malaysia
Produkta apraksts
RF Amplifiers, Analog Devices Hittite
Analog Devices Hittite have a series of RF amplifiers that have a range of functions. Some feature low Noise amplifiers, some RF Amplifiers are integrated with resonators, negative resistance devices, varactor diodes, and buffer amplifiers and other offer high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC driver amplifiers.