Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
14 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
450 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Width
4.7mm
Typical Gate Charge @ Vgs
81 nC @ 10 V
Height
9.01mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts
N-Channel MOSFET, 500V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 78,75
€ 3,15 Katrs (tiek piegadats Tubina) (bez PVN)
€ 95,29
€ 3,812 Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
Industriālais iepakojums (Penālis)
25
€ 78,75
€ 3,15 Katrs (tiek piegadats Tubina) (bez PVN)
€ 95,29
€ 3,812 Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Industriālais iepakojums (Penālis)
25
Noliktavas stāvoklis patreiz nav pieejams
Daudzums | Vienības cena | Per Penālis |
---|---|---|
25 - 45 | € 3,15 | € 15,75 |
50 - 120 | € 3,05 | € 15,25 |
125 - 245 | € 2,70 | € 13,50 |
250+ | € 2,55 | € 12,75 |
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
14 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
450 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Width
4.7mm
Typical Gate Charge @ Vgs
81 nC @ 10 V
Height
9.01mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts