Vishay Siliconix TrenchFET N-Channel MOSFET, 75 A, 40 V, 4-Pin PowerPAK SO-8L SQJA76EP-T1_GE3
Tehniskie dokumenti
Specifikācija
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
75 A
Maximum Drain Source Voltage
40 V
Series
TrenchFET
Package Type
PowerPAK SO-8L
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
66 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Length
5.99mm
Typical Gate Charge @ Vgs
66 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
5mm
Transistor Material
Si
Automotive Standard
AEC-Q101
Height
1.07mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Izcelsmes valsts
China
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€ 10,50
€ 1,05 Katrs (Paka ir 10) (bez PVN)
€ 12,70
€ 1,27 Katrs (Paka ir 10) (Ieskaitot PVN)
Standarts
10
€ 10,50
€ 1,05 Katrs (Paka ir 10) (bez PVN)
€ 12,70
€ 1,27 Katrs (Paka ir 10) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Standarts
10
Noliktavas stāvoklis patreiz nav pieejams
| Daudzums | Vienības cena | Per Iepakojums |
|---|---|---|
| 10 - 90 | € 1,05 | € 10,50 |
| 100 - 490 | € 0,80 | € 8,00 |
| 500 - 990 | € 0,679 | € 6,79 |
| 1000+ | € 0,586 | € 5,86 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
75 A
Maximum Drain Source Voltage
40 V
Series
TrenchFET
Package Type
PowerPAK SO-8L
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
66 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Length
5.99mm
Typical Gate Charge @ Vgs
66 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
5mm
Transistor Material
Si
Automotive Standard
AEC-Q101
Height
1.07mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Izcelsmes valsts
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products