Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.4V
Minimum Gate Threshold Voltage
2.4V
Maximum Power Dissipation
35 W @ 25 °C
Transistor Configuration
Single
Maximum Gate Source Voltage
+30 V
Number of Elements per Chip
1
Width
4.5mm
Length
10mm
Typical Gate Charge @ Vgs
11 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
-1.7V
Height
15mm
Izcelsmes valsts
Japan
Produkta apraksts
MOSFET Transistors, Toshiba
€ 8,14
€ 0,407 Katrs (Paka ir 20) (bez PVN)
€ 9,85
€ 0,492 Katrs (Paka ir 20) (Ieskaitot PVN)
20
€ 8,14
€ 0,407 Katrs (Paka ir 20) (bez PVN)
€ 9,85
€ 0,492 Katrs (Paka ir 20) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
20
Noliktavas stāvoklis patreiz nav pieejams
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
20 - 40 | € 0,407 | € 8,14 |
60+ | € 0,366 | € 7,32 |
Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.4V
Minimum Gate Threshold Voltage
2.4V
Maximum Power Dissipation
35 W @ 25 °C
Transistor Configuration
Single
Maximum Gate Source Voltage
+30 V
Number of Elements per Chip
1
Width
4.5mm
Length
10mm
Typical Gate Charge @ Vgs
11 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
-1.7V
Height
15mm
Izcelsmes valsts
Japan
Produkta apraksts