Taiwan Semi N-Channel MOSFET, 3.3 A, 600 V, 3-Pin DPAK TSM60NB1R4CP ROG

RS noliktavas nr.: 171-3628Ražotājs: Taiwan SemiconductorRažotāja kods: TSM60NB1R4CP ROG
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

3.3 A

Maximum Drain Source Voltage

600 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.4 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

38 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Number of Elements per Chip

1

Width

5.8mm

Length

6.5mm

Typical Gate Charge @ Vgs

7.7 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

Height

2.3mm

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€ 3 125,00

€ 1,25 Katrs (Rulli ir 2500) (bez PVN)

€ 3 781,25

€ 1,512 Katrs (Rulli ir 2500) (Ieskaitot PVN)

Taiwan Semi N-Channel MOSFET, 3.3 A, 600 V, 3-Pin DPAK TSM60NB1R4CP ROG

€ 3 125,00

€ 1,25 Katrs (Rulli ir 2500) (bez PVN)

€ 3 781,25

€ 1,512 Katrs (Rulli ir 2500) (Ieskaitot PVN)

Taiwan Semi N-Channel MOSFET, 3.3 A, 600 V, 3-Pin DPAK TSM60NB1R4CP ROG

Noliktavas stāvoklis patreiz nav pieejams

Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

3.3 A

Maximum Drain Source Voltage

600 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.4 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

38 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Number of Elements per Chip

1

Width

5.8mm

Length

6.5mm

Typical Gate Charge @ Vgs

7.7 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

Height

2.3mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more