Taiwan Semi N-Channel MOSFET, 2.8 A, 20 V, 3-Pin SOT-23 TSM2302CX RFG
Tehniskie dokumenti
Specifikācija
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
2.8 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
900 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Typical Gate Charge @ Vgs
3.69 nC @ 4.5 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.05mm
Maximum Operating Temperature
+150 °C
Height
0.95mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
N-Channel Power MOSFET, Taiwan Semiconductor
MOSFET Transistors, Taiwan Semiconductor
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€ 34,75
€ 0,139 Katrs (tiek piegadats Rulli) (bez PVN)
€ 42,05
€ 0,168 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
250
€ 34,75
€ 0,139 Katrs (tiek piegadats Rulli) (bez PVN)
€ 42,05
€ 0,168 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Industriālais iepakojums (Rullis)
250
Noliktavas stāvoklis patreiz nav pieejams
| Daudzums | Vienības cena | Per Rullis |
|---|---|---|
| 250 - 450 | € 0,139 | € 6,95 |
| 500 - 950 | € 0,13 | € 6,50 |
| 1000 - 2450 | € 0,123 | € 6,15 |
| 2500+ | € 0,116 | € 5,80 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
2.8 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
900 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Typical Gate Charge @ Vgs
3.69 nC @ 4.5 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.05mm
Maximum Operating Temperature
+150 °C
Height
0.95mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
N-Channel Power MOSFET, Taiwan Semiconductor
MOSFET Transistors, Taiwan Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products