Infineon FD150R12RT4HOSA1 IGBT Module, 150 A 1200 V
Tehniskie dokumenti
Specifikācija
Brand
InfineonMaximum Continuous Collector Current
150 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
790 W
Number of Transistors
1
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€ 246,00
€ 123,00 Katrs (tiek piegadats Penali) (bez PVN)
€ 297,66
€ 148,83 Katrs (tiek piegadats Penali) (Ieskaitot PVN)
Industriālais iepakojums (Paplāte)
2
€ 246,00
€ 123,00 Katrs (tiek piegadats Penali) (bez PVN)
€ 297,66
€ 148,83 Katrs (tiek piegadats Penali) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Industriālais iepakojums (Paplāte)
2
Noliktavas stāvoklis patreiz nav pieejams
| Daudzums | Vienības cena |
|---|---|
| 2 - 4 | € 123,00 |
| 5+ | € 111,00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
InfineonMaximum Continuous Collector Current
150 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
790 W
Number of Transistors
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products