Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
185 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
9 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
-3V
Minimum Gate Threshold Voltage
-1V
Maximum Power Dissipation
350 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
2.64mm
Length
3.04mm
Typical Gate Charge @ Vgs
1.7 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
-1.4V
Height
1.02mm
€ 7,10
€ 0,284 Katrs (Paka ir 25) (bez PVN)
€ 8,59
€ 0,344 Katrs (Paka ir 25) (Ieskaitot PVN)
Standarts
25
€ 7,10
€ 0,284 Katrs (Paka ir 25) (bez PVN)
€ 8,59
€ 0,344 Katrs (Paka ir 25) (Ieskaitot PVN)
Standarts
25
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
25 - 225 | € 0,284 | € 7,10 |
250 - 600 | € 0,227 | € 5,68 |
625 - 1225 | € 0,171 | € 4,28 |
1250 - 2475 | € 0,143 | € 3,58 |
2500+ | € 0,128 | € 3,20 |
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
185 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
9 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
-3V
Minimum Gate Threshold Voltage
-1V
Maximum Power Dissipation
350 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
2.64mm
Length
3.04mm
Typical Gate Charge @ Vgs
1.7 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
-1.4V
Height
1.02mm