Vishay SQ Rugged N-Channel MOSFET, 40 A, 60 V, 3-Pin DPAK SQD40N06-14L_GE3
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
60 V
Series
SQ Rugged
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
29 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
75 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.73mm
Typical Gate Charge @ Vgs
34 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
2.38mm
Minimum Operating Temperature
-55 °C
Automotive Standard
AEC-Q101
Produkta apraksts
N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor
The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability.
Approvals
AEC-Q101
MOSFET Transistors, Vishay Semiconductor
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€ 9,50
€ 1,90 Katrs (Paka ir 5) (bez PVN)
€ 11,50
€ 2,299 Katrs (Paka ir 5) (Ieskaitot PVN)
Standarts
5
€ 9,50
€ 1,90 Katrs (Paka ir 5) (bez PVN)
€ 11,50
€ 2,299 Katrs (Paka ir 5) (Ieskaitot PVN)
Standarts
5
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
| Daudzums | Vienības cena | Per Iepakojums |
|---|---|---|
| 5 - 45 | € 1,90 | € 9,50 |
| 50 - 120 | € 1,70 | € 8,50 |
| 125 - 245 | € 1,65 | € 8,25 |
| 250 - 495 | € 1,55 | € 7,75 |
| 500+ | € 1,45 | € 7,25 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
60 V
Series
SQ Rugged
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
29 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
75 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.73mm
Typical Gate Charge @ Vgs
34 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
2.38mm
Minimum Operating Temperature
-55 °C
Automotive Standard
AEC-Q101
Produkta apraksts
N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor
The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability.
Approvals
AEC-Q101
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products