Tehniskie dokumenti
Specifikācija
Brand
Texas InstrumentsChannel Type
P
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
8 V
Package Type
DSBGA
Mounting Type
Surface Mount
Pin Count
9
Maximum Drain Source Resistance
14 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-6 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
1.5mm
Typical Gate Charge @ Vgs
18.9 nC @ 4 V
Width
1.5mm
Number of Elements per Chip
1
Forward Diode Voltage
1V
Height
0.35mm
Series
NexFET
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
Philippines
Produkta apraksts
P-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,085
Katrs (Rulli ir 250) (bez PVN)
€ 0,103
Katrs (Rulli ir 250) (Ieskaitot PVN)
250
€ 0,085
Katrs (Rulli ir 250) (bez PVN)
€ 0,103
Katrs (Rulli ir 250) (Ieskaitot PVN)
250
Tehniskie dokumenti
Specifikācija
Brand
Texas InstrumentsChannel Type
P
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
8 V
Package Type
DSBGA
Mounting Type
Surface Mount
Pin Count
9
Maximum Drain Source Resistance
14 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-6 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
1.5mm
Typical Gate Charge @ Vgs
18.9 nC @ 4 V
Width
1.5mm
Number of Elements per Chip
1
Forward Diode Voltage
1V
Height
0.35mm
Series
NexFET
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
Philippines
Produkta apraksts