N-Channel MOSFET, 13 A, 600 V, 3-Pin ITO-220S Taiwan Semi TSM60NB260CI C0G
Tehniskie dokumenti
Specifikācija
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
600 V
Package Type
ITO-220S
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
260 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
32.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Width
4.6mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10mm
Typical Gate Charge @ Vgs
30 nC @ 10 V
Height
15mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V
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Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 3,65
Katrs (Rulli ir 1000) (bez PVN)
€ 4,416
Katrs (Rulli ir 1000) (Ieskaitot PVN)
1000
€ 3,65
Katrs (Rulli ir 1000) (bez PVN)
€ 4,416
Katrs (Rulli ir 1000) (Ieskaitot PVN)
1000
Ideate. Create. Collaborate
JOIN FOR FREE
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- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Tehniskie dokumenti
Specifikācija
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
600 V
Package Type
ITO-220S
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
260 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
32.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Width
4.6mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10mm
Typical Gate Charge @ Vgs
30 nC @ 10 V
Height
15mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products