Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
200 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.125 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
10.4mm
Typical Gate Charge @ Vgs
28 nC @ 10 V
Width
4.6mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Height
16.4mm
Series
STripFET
Minimum Operating Temperature
-55 °C
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 1,65
Katrs (Tubina ir 50) (bez PVN)
€ 1,996
Katrs (Tubina ir 50) (Ieskaitot PVN)
50
€ 1,65
Katrs (Tubina ir 50) (bez PVN)
€ 1,996
Katrs (Tubina ir 50) (Ieskaitot PVN)
50
Pirkt iepakojumos
Daudzums | Vienības cena | Per Penālis |
---|---|---|
50 - 50 | € 1,65 | € 82,50 |
100 - 450 | € 1,25 | € 62,50 |
500 - 950 | € 1,05 | € 52,50 |
1000+ | € 0,851 | € 42,55 |
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
200 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.125 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
10.4mm
Typical Gate Charge @ Vgs
28 nC @ 10 V
Width
4.6mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Height
16.4mm
Series
STripFET
Minimum Operating Temperature
-55 °C