Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
15 A
Package Type
D2PAK
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
230 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.75V
Minimum Gate Threshold Voltage
3.25V
Maximum Power Dissipation
130 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Maximum Operating Temperature
+150 °C
Length
10.4mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Width
9.35mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
Height
4.37mm
Izcelsmes valsts
China
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 1,40
Katrs (Rulli ir 1000) (bez PVN)
€ 1,694
Katrs (Rulli ir 1000) (Ieskaitot PVN)
1000
€ 1,40
Katrs (Rulli ir 1000) (bez PVN)
€ 1,694
Katrs (Rulli ir 1000) (Ieskaitot PVN)
1000
Pirkt iepakojumos
Daudzums | Vienības cena | Per Rullis |
---|---|---|
1000 - 1000 | € 1,40 | € 1 400,00 |
2000 - 4000 | € 1,35 | € 1 350,00 |
5000+ | € 1,30 | € 1 300,00 |
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
15 A
Package Type
D2PAK
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
230 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.75V
Minimum Gate Threshold Voltage
3.25V
Maximum Power Dissipation
130 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Maximum Operating Temperature
+150 °C
Length
10.4mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Width
9.35mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
Height
4.37mm
Izcelsmes valsts
China