Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
100 A
Maximum Collector Emitter Voltage
125 V
Package Type
ISOTOP
Mounting Type
Panel Mount
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Collector Base Voltage
200 V
Maximum Emitter Base Voltage
7 V
Pin Count
4
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
9.1 x 38.2 x 25.5mm
Maximum Collector Emitter Saturation Voltage
1.5 V
Produkta apraksts
NPN Power Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
€ 5 025,00
€ 67,00 Katrs (Tubina ir 75) (bez PVN)
€ 6 080,25
€ 81,07 Katrs (Tubina ir 75) (Ieskaitot PVN)
75
€ 5 025,00
€ 67,00 Katrs (Tubina ir 75) (bez PVN)
€ 6 080,25
€ 81,07 Katrs (Tubina ir 75) (Ieskaitot PVN)
75
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Penālis |
---|---|---|
75 - 75 | € 67,00 | € 5 025,00 |
150 - 150 | € 59,50 | € 4 462,50 |
225 - 450 | € 55,50 | € 4 162,50 |
525+ | € 51,50 | € 3 862,50 |
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
100 A
Maximum Collector Emitter Voltage
125 V
Package Type
ISOTOP
Mounting Type
Panel Mount
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Collector Base Voltage
200 V
Maximum Emitter Base Voltage
7 V
Pin Count
4
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
9.1 x 38.2 x 25.5mm
Maximum Collector Emitter Saturation Voltage
1.5 V
Produkta apraksts
NPN Power Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.