Dual P-Channel MOSFET, 9 A, 30 V, 8-Pin SOP ROHM SH8J66TB1

RS noliktavas nr.: 177-6665Ražotājs: ROHMRažotāja kods: SH8J66TB1
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Tehniskie dokumenti

Specifikācija

Brand

ROHM

Channel Type

P

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

30 V

Series

SH8J66

Package Type

SOP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

18.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2 W

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

5.2mm

Typical Gate Charge @ Vgs

35 nC @ 5 V

Width

4.05mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.6mm

Izcelsmes valsts

Thailand

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 3,20

Katrs (Paka ir 5) (bez PVN)

€ 3,872

Katrs (Paka ir 5) (Ieskaitot PVN)

Dual P-Channel MOSFET, 9 A, 30 V, 8-Pin SOP ROHM SH8J66TB1

€ 3,20

Katrs (Paka ir 5) (bez PVN)

€ 3,872

Katrs (Paka ir 5) (Ieskaitot PVN)

Dual P-Channel MOSFET, 9 A, 30 V, 8-Pin SOP ROHM SH8J66TB1
Noliktavas stāvoklis patreiz nav pieejams

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
5 - 45€ 3,20€ 16,00
50 - 95€ 2,90€ 14,50
100 - 245€ 2,60€ 13,00
250 - 995€ 2,40€ 12,00
1000+€ 2,25€ 11,25

Ideate. Create. Collaborate

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

ROHM

Channel Type

P

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

30 V

Series

SH8J66

Package Type

SOP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

18.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2 W

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

5.2mm

Typical Gate Charge @ Vgs

35 nC @ 5 V

Width

4.05mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.6mm

Izcelsmes valsts

Thailand

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more