Tehniskie dokumenti
Specifikācija
Brand
ROHMChannel Type
P
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
30 V
Series
RQ6E050AT
Package Type
TSMT-6
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
38 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Dual Base
Maximum Gate Source Voltage
-18 V, +18 V
Width
1.8mm
Number of Elements per Chip
1
Length
3mm
Typical Gate Charge @ Vgs
20.8 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
0.95mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Izcelsmes valsts
Thailand
Produkta apraksts
P-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
€ 8,60
€ 0,344 Katrs (Paka ir 25) (bez PVN)
€ 10,41
€ 0,416 Katrs (Paka ir 25) (Ieskaitot PVN)
25
€ 8,60
€ 0,344 Katrs (Paka ir 25) (bez PVN)
€ 10,41
€ 0,416 Katrs (Paka ir 25) (Ieskaitot PVN)
25
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Tehniskie dokumenti
Specifikācija
Brand
ROHMChannel Type
P
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
30 V
Series
RQ6E050AT
Package Type
TSMT-6
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
38 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Dual Base
Maximum Gate Source Voltage
-18 V, +18 V
Width
1.8mm
Number of Elements per Chip
1
Length
3mm
Typical Gate Charge @ Vgs
20.8 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
0.95mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Izcelsmes valsts
Thailand
Produkta apraksts