Tehniskie dokumenti
Specifikācija
Brand
PanasonicChannel Type
N
Idss Drain-Source Cut-off Current
5 to 12mA
Maximum Drain Gate Voltage
-55V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SMini3 F2 B
Pin Count
3
Dimensions
2 x 1.25 x 0.8mm
Maximum Operating Temperature
+150 °C
Length
2mm
Height
0.8mm
Width
1.25mm
Izcelsmes valsts
China
Produkta apraksts
N-channel JFET, Panasonic
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,059
Katrs (Paka ir 20) (bez PVN)
€ 0,071
Katrs (Paka ir 20) (Ieskaitot PVN)
20
€ 0,059
Katrs (Paka ir 20) (bez PVN)
€ 0,071
Katrs (Paka ir 20) (Ieskaitot PVN)
20
Tehniskie dokumenti
Specifikācija
Brand
PanasonicChannel Type
N
Idss Drain-Source Cut-off Current
5 to 12mA
Maximum Drain Gate Voltage
-55V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SMini3 F2 B
Pin Count
3
Dimensions
2 x 1.25 x 0.8mm
Maximum Operating Temperature
+150 °C
Length
2mm
Height
0.8mm
Width
1.25mm
Izcelsmes valsts
China
Produkta apraksts
N-channel JFET, Panasonic
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.