Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-28FL, VEC8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
194 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
11 nC @ 10 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Width
2.3mm
Length
2.9mm
Number of Elements per Chip
2
Forward Diode Voltage
1.2V
Height
0.73mm
Izcelsmes valsts
China
Produkta apraksts
Dual P-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,668
Katrs (Paka ir 10) (bez PVN)
€ 0,808
Katrs (Paka ir 10) (Ieskaitot PVN)
10
€ 0,668
Katrs (Paka ir 10) (bez PVN)
€ 0,808
Katrs (Paka ir 10) (Ieskaitot PVN)
10
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-28FL, VEC8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
194 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
11 nC @ 10 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Width
2.3mm
Length
2.9mm
Number of Elements per Chip
2
Forward Diode Voltage
1.2V
Height
0.73mm
Izcelsmes valsts
China
Produkta apraksts