Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
PNP
Maximum Continuous Collector Current
25 (Continuous) A, 40 (Peak) A
Maximum Collector Emitter Voltage
100 V dc
Maximum Emitter Base Voltage
5 V dc
Package Type
SOT-93
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
15
Maximum Collector Base Voltage
100 V dc
Maximum Collector Emitter Saturation Voltage
4 V dc
Maximum Collector Cut-off Current
1mA
Height
20.35mm
Maximum Power Dissipation
125 W
Minimum Operating Temperature
-65 °C
Dimensions
15.2 x 4.9 x 20.35mm
Width
4.9mm
Maximum Operating Temperature
+150 °C
Length
15.2mm
Base Current
5A
Izcelsmes valsts
China
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 3,65
Katrs (Paka ir 2) (bez PVN)
€ 4,416
Katrs (Paka ir 2) (Ieskaitot PVN)
Standarts
2
€ 3,65
Katrs (Paka ir 2) (bez PVN)
€ 4,416
Katrs (Paka ir 2) (Ieskaitot PVN)
Standarts
2
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
2 - 8 | € 3,65 | € 7,30 |
10 - 98 | € 3,10 | € 6,20 |
100 - 248 | € 2,50 | € 5,00 |
250 - 498 | € 2,45 | € 4,90 |
500+ | € 2,10 | € 4,20 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
PNP
Maximum Continuous Collector Current
25 (Continuous) A, 40 (Peak) A
Maximum Collector Emitter Voltage
100 V dc
Maximum Emitter Base Voltage
5 V dc
Package Type
SOT-93
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
15
Maximum Collector Base Voltage
100 V dc
Maximum Collector Emitter Saturation Voltage
4 V dc
Maximum Collector Cut-off Current
1mA
Height
20.35mm
Maximum Power Dissipation
125 W
Minimum Operating Temperature
-65 °C
Dimensions
15.2 x 4.9 x 20.35mm
Width
4.9mm
Maximum Operating Temperature
+150 °C
Length
15.2mm
Base Current
5A
Izcelsmes valsts
China