Tehniskie dokumenti
Specifikācija
Brand
onsemiMaximum Continuous Collector Current
25 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20.0V
Number of Transistors
6
Package Type
DIP26
Configuration
3 Phase
Mounting Type
Through Hole
Channel Type
N
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Noliktavas stāvoklis patreiz nav pieejams
€ 57,50
€ 57,50 Katrs (bez PVN)
€ 69,58
€ 69,58 Katrs (Ieskaitot PVN)
onsemi NXH25C120L2C2SG 3 Phase IGBT Module, 25 A 650 V DIP26, Through Hole
1
€ 57,50
€ 57,50 Katrs (bez PVN)
€ 69,58
€ 69,58 Katrs (Ieskaitot PVN)
onsemi NXH25C120L2C2SG 3 Phase IGBT Module, 25 A 650 V DIP26, Through Hole
Noliktavas stāvoklis patreiz nav pieejams
1
Tehniskie dokumenti
Specifikācija
Brand
onsemiMaximum Continuous Collector Current
25 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20.0V
Number of Transistors
6
Package Type
DIP26
Configuration
3 Phase
Mounting Type
Through Hole
Channel Type
N