Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
7.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
200 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+175 °C
Length
5.1mm
Number of Elements per Chip
1
Width
6.1mm
Typical Gate Charge @ Vgs
160 nC @ 10 V
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Height
1.05mm
Izcelsmes valsts
Malaysia
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 2,40
Katrs (Rulli ir 1500) (bez PVN)
€ 2,904
Katrs (Rulli ir 1500) (Ieskaitot PVN)
1500
€ 2,40
Katrs (Rulli ir 1500) (bez PVN)
€ 2,904
Katrs (Rulli ir 1500) (Ieskaitot PVN)
1500
Pirkt iepakojumos
Daudzums | Vienības cena | Per Rullis |
---|---|---|
1500 - 6000 | € 2,40 | € 3 600,00 |
7500+ | € 2,35 | € 3 525,00 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
7.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
200 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+175 °C
Length
5.1mm
Number of Elements per Chip
1
Width
6.1mm
Typical Gate Charge @ Vgs
160 nC @ 10 V
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Height
1.05mm
Izcelsmes valsts
Malaysia