Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
42 A
Maximum Drain Source Voltage
60 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
14.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
37 W
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
2
Width
6.1mm
Length
5.1mm
Typical Gate Charge @ Vgs
4.7 nC @ 4.5 V
Maximum Operating Temperature
+175 °C
Forward Diode Voltage
1.2V
Height
1.05mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
Malaysia
€ 2,97
€ 0,297 Katrs (Paka ir 10) (bez PVN)
€ 3,59
€ 0,359 Katrs (Paka ir 10) (Ieskaitot PVN)
Standarts
10
€ 2,97
€ 0,297 Katrs (Paka ir 10) (bez PVN)
€ 3,59
€ 0,359 Katrs (Paka ir 10) (Ieskaitot PVN)
Standarts
10
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Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
42 A
Maximum Drain Source Voltage
60 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
14.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
37 W
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
2
Width
6.1mm
Length
5.1mm
Typical Gate Charge @ Vgs
4.7 nC @ 4.5 V
Maximum Operating Temperature
+175 °C
Forward Diode Voltage
1.2V
Height
1.05mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
Malaysia