Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
12 A
Maximum Collector Emitter Voltage
400 V
Package Type
TO-3P
Mounting Type
Through Hole
Maximum Power Dissipation
130 W
Transistor Configuration
Single
Maximum Collector Base Voltage
700 V
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
15.8 x 5 x 20.1mm
Maximum Operating Temperature
+150 °C
Produkta apraksts
High Voltage NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 1,30
Katrs (Tubina ir 30) (bez PVN)
€ 1,573
Katrs (Tubina ir 30) (Ieskaitot PVN)
30
€ 1,30
Katrs (Tubina ir 30) (bez PVN)
€ 1,573
Katrs (Tubina ir 30) (Ieskaitot PVN)
30
Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
12 A
Maximum Collector Emitter Voltage
400 V
Package Type
TO-3P
Mounting Type
Through Hole
Maximum Power Dissipation
130 W
Transistor Configuration
Single
Maximum Collector Base Voltage
700 V
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
15.8 x 5 x 20.1mm
Maximum Operating Temperature
+150 °C
Produkta apraksts
High Voltage NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.