Tehniskie dokumenti
Specifikācija
Brand
onsemiMaximum Continuous Collector Current
200 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
375 W
Number of Transistors
1
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
P
Pin Count
4
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
15.8 x 5.2 x 22.74mm
Minimum Operating Temperature
-55 °C
Gate Capacitance
5100pF
Maximum Operating Temperature
+175 °C
Energy Rating
160mJ
Izcelsmes valsts
China
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 10,30
Katrs (bez PVN)
€ 12,46
Katrs (Ieskaitot PVN)
1
€ 10,30
Katrs (bez PVN)
€ 12,46
Katrs (Ieskaitot PVN)
1
Pirkt iepakojumos
Daudzums | Vienības cena |
---|---|
1 - 9 | € 10,30 |
10 - 99 | € 9,20 |
100 - 249 | € 6,40 |
250 - 499 | € 6,20 |
500+ | € 6,00 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiMaximum Continuous Collector Current
200 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
375 W
Number of Transistors
1
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
P
Pin Count
4
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
15.8 x 5.2 x 22.74mm
Minimum Operating Temperature
-55 °C
Gate Capacitance
5100pF
Maximum Operating Temperature
+175 °C
Energy Rating
160mJ
Izcelsmes valsts
China