Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
57 A
Maximum Drain Source Voltage
100 V
Package Type
PQFN8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
8.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
54 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Typical Gate Charge @ Vgs
21 nC @ 10 V
Width
3.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.4mm
Height
0.75mm
Series
PowerTrench
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Produkta apraksts
N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 1,70
Katrs (Paka ir 10) (bez PVN)
€ 2,057
Katrs (Paka ir 10) (Ieskaitot PVN)
10
€ 1,70
Katrs (Paka ir 10) (bez PVN)
€ 2,057
Katrs (Paka ir 10) (Ieskaitot PVN)
10
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
10 - 90 | € 1,70 | € 17,00 |
100 - 490 | € 1,65 | € 16,50 |
500 - 990 | € 1,60 | € 16,00 |
1000 - 2990 | € 1,60 | € 16,00 |
3000+ | € 1,55 | € 15,50 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
57 A
Maximum Drain Source Voltage
100 V
Package Type
PQFN8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
8.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
54 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Typical Gate Charge @ Vgs
21 nC @ 10 V
Width
3.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.4mm
Height
0.75mm
Series
PowerTrench
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Produkta apraksts